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| 0.5 - 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10136 Features * Low Noise Figure: 0.5 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 20 mA * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 20.0 dBm Typical P1 dB at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and Reel Packaging Option Available [1] Description The ATF-10136 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 70 70 -4.0 12.0 Min. Typ. Max. 0.4 0.5 0.8 16.5 13.0 11.0 20.0 12.0 140 130 -1.3 180 -0.5 0.6 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 70 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA Transconductance: VDS = 2 V, VGS = 0 V Saturated Drain Current: VDS = 2 V, VGS = 0 V Pinchoff Voltage: VDS = 2 V, IDS = 1 mA Note: 1. Refer to PACKAGING section "Tape-and-Reel Packaging for Surface Mount Semiconductors." 5-23 5965-8701E ATF-10136 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum[1] + 5 -4 -7 IDSS 430 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 2.9 mW/C for TCASE > 25C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See APPLICATIONS PRIMER IIIA for more information. Thermal Resistance: Liquid Crystal Measurement: jc = 350C/W; TCH = 150C 1 m Spot Size[5] Part Number Ordering Information Part Number ATF-10136-TR1 ATF-10136-STR Devices Per Reel 1000 10 Reel Size 7" STRIP For more information, see "Tape and Reel Packaging for Semiconductor Devices." ATF-10136 Noise Parameters: VDS = 2 V, IDS = 25 mA Freq. GHz 0.5 1.0 2.0 4.0 6.0 8.0 NFO dB 0.35 0.4 0.4 0.5 0.8 1.1 opt Mag 0.93 0.85 0.70 0.39 0.36 0.45 Ang 12 24 47 126 -170 -100 RN/50 0.80 0.70 0.46 0.36 0.12 0.38 ATF-10136 Typical Performance, T A = 25C 18 15 GA (dB) 2.0 1.5 NFO (dB) 1.0 0.5 0 2.0 NFO GA 16 14 GA 30 GA (dB) 25 20 GAIN (dB) 15 10 |S21|2 MAG MSG 12 9 12 10 1.5 NFO (dB) 6 1.0 NFO 0.5 0 5 0 0.5 4.0 6.0 8.0 10.0 12.0 0 10 20 30 IDS (mA) 40 50 60 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2V, IDS = 25 mA, TA = 25C. Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2V, f = 4.0 GHz. Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA. 5-24 Typical Scattering Parameters, Common Source, ZO = 50 , TA = 25C, VDS = 2 V, IDS = 25 mA Freq. MHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .98 .93 .79 .64 .54 .47 .45 .50 .60 .68 .73 .77 .80 Ang. -18 -33 -66 -94 -120 -155 162 120 87 61 42 26 14 dB 14.5 14.3 13.3 12.2 11.1 10.1 9.2 8.0 6.4 4.9 3.6 2.0 1.0 S21 Mag. 5.32 5.19 4.64 4.07 3.60 3.20 2.88 2.51 2.09 1.75 1.52 1.26 1.12 Ang. 163 147 113 87 61 37 13 -10 -32 -51 -66 -82 -97 dB -34.0 -28.4 -22.6 -19.2 -17.3 -15.5 -14.3 -13.9 -13.6 -13.6 -13.7 -13.8 -14.0 S12 Mag. .020 .038 .074 .110 .137 .167 .193 .203 .210 .209 .207 .205 .200 S22 Ang. 78 67 59 44 31 13 -2 -19 -36 -46 -58 -73 -82 Mag. .35 .36 .30 .27 .22 .16 .08 .16 .32 .44 .51 .54 .54 Ang. -9 -19 -31 -42 -49 -54 -17 45 48 38 34 27 15 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 4 DRAIN 3 0.508 (0.020) 2.11 (0.083) DIA. GATE 1 101 SOURCE 1.45 0.25 (0.057 0.010) 2 2.54 (0.100) 0.15 0.05 (0.006 0.002) 0.56 (0.022) 4.57 0.25 0.180 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13 5-25 |
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